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cleavage of lateral epitaxial films for transfer; CLEFT
A process for making inexpensive Gallium Arsenide (GaAs) photovoltaic cells in which a thin film of GaAs is grown on top of a thick, single-crystal GaAs (or other suitable material) substrate and then is cleaved from the substrate and incorporated into a cell, allowing the substrate to be reused to grow more thin-film GaAs.

This entry is located in the following unit: Photovoltaic Conversion Efficiency Terms + (page 4)